| 发明名称 |
SEMICONDUCTOR STRUCTURE |
| 摘要 |
Provided is a semiconductor structure including a first die and a second die. The first die has a first conductive structure embedded in a dielectric layer. The second die has a second conductive structure embedded in the dielectric layer. A first interface is provided between the first conductive structure and the dielectric layer. A second interface is provided between the second conductive structure and the dielectric layer. A shape of the dielectric layer between the first interface and the second interface is a non-linear shape. |
| 申请公布号 |
US2017047277(A1) |
申请公布日期 |
2017.02.16 |
| 申请号 |
US201615096293 |
申请日期 |
2016.04.12 |
| 申请人 |
Powertech Technology Inc. |
发明人 |
Lan Yuan-Fu;Hsu Hsien-Wen |
| 分类号 |
H01L23/498;H05K3/26;H05K1/02;H05K3/00 |
主分类号 |
H01L23/498 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure, comprising:
a first die having a first conductive structure embedded in a dielectric layer; and a second die having a second conductive structure embedded in the dielectric layer, wherein a first interface is provided between the first conductive structure and the dielectric layer, and a second interface is provided between the second conductive structure and the dielectric layer, a shape of the dielectric layer between the first interface and the second interface being a non-linear shape. |
| 地址 |
Hsinchu County TW |
