| 主权项 |
1. A method for nanogap creation, the method comprising:
patterning windows in a hard mask layer disposed on a substrate; anisotropically etching trenches in the substrate according to the windows patterned in the hard mask layer, such that the trenches have tapered sidewalls; forming a sacrificial layer on bottoms and the tapered sidewalls of the trenches; disposing a filling material in the trenches and on top of the hard mask layer, the filling material being on top of the sacrificial layer in the trenches; performing a first chemical mechanical polishing to remove the filling material down to the hard mask layer, the first chemical mechanical polishing configured to stop on the hard mask layer such that the trenches remained filled with the filling material; performing a second chemical mechanical polishing to remove the hard mask layer, the second chemical mechanical polishing removing dishing and roughness associated with the filling material in the trenches after the first chemical mechanical polishing; removing at least a portion of the sacrificial layer from the tapered sidewalls of the trenches such that nanogaps are formed where the sacrificial layer is removed, while the sacrificial layer remains on the bottoms of the trenches, wherein each of the nanogaps are formed between one tapered sidewall of the substrate and a corresponding tapered sidewall of the filling material, the one tapered sidewall of the substrate opposing the corresponding tapered sidewall; and disposing a capping layer on top of the substrate and the filling material, such that the nanogaps are covered but not filled in. |
