METHOD, SYSTEM AND DEVICE FOR NON-VOLATILE MEMORY DEVICE OPERATION

摘要

Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.

主权项

1. A device comprising:
a voltage supply to generate a read supply voltage; a first CES element; a first conducting element to connect a bitline to a terminal of the first CES element in response to a wordline voltage signal during a read operation and a write operation, the first conducting element to permit a voltage and a current between the bitline and the terminal of the first CES element during the read operation and to permit an increased voltage and current between the bitline and the terminal of the first CES element during the write operation; and a second conducting element to connect the first CES element between the voltage supply and a reference node during the read operation and to isolate the first CES element from the voltage supply or the reference node in the write operation.