| 发明名称 |
WET CLEAN PROCESS FOR REMOVING CxHyFz ETCH RESIDUE |
| 摘要 |
A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN). |
| 申请公布号 |
US2017044470(A1) |
申请公布日期 |
2017.02.16 |
| 申请号 |
US201615334863 |
申请日期 |
2016.10.26 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION ;Zeon Corporation |
发明人 |
Bruce Robert L.;Engelmann Sebastian U.;Joseph Eric A.;Khojasteh Mahmoud;Nakamura Masahiro;Papa Rao Satyavolu S.;To Bang N.;Totir George G.;Zhu Yu |
| 分类号 |
C11D7/10;H01L21/02;C11D11/00;H01L21/3065 |
主分类号 |
C11D7/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An etch chemistry for removing hydrocarbon etch residues comprising an aqueous solution including a complex including at least one element of the lanthanide family. |
| 地址 |
Armonk NY US |
