| 发明名称 |
METHOD FOR REDUCING CROSSTALK IN CMOS IMAGE SENSOR |
| 摘要 |
A method of manufacturing a CMOS image sensor includes providing a semiconductor substrate having a front side and a back side, forming at least two pixels in the front side, forming a shallow trench isolation in the front side between the at least two pixels, forming a deep trench in the back side at a location above the shallow trench isolation, and depositing a dielectric layer in the deep trench to form a crosstalk reduction element. |
| 申请公布号 |
US2017047373(A1) |
申请公布日期 |
2017.02.16 |
| 申请号 |
US201615339598 |
申请日期 |
2016.10.31 |
| 申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
PENG WENJIE;XI MINWEI |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a CMOS image sensor, the method comprising:
providing a semiconductor substrate having a front side and a back side; forming at least two pixels in the front side; forming a shallow trench isolation in the front side between the at least two pixels; forming a deep trench in the back side at a location above the shallow trench isolation; and depositing a dielectric layer in the deep trench to form a crosstalk reduction element. |
| 地址 |
Shanghai CN |
