METHODS AND DEVICES FOR METAL FILLING PROCESSES

摘要

Metal filling processes for semiconductor devices and methods of fabricating semiconductor devices. One method includes, for instance: obtaining a wafer with at least one contact opening; depositing a metal alloy into at least a portion of the at least one contact opening; separating the metal alloy into a first metal layer and a second metal layer; depositing a barrier stack over the wafer; forming at least one trench opening; forming at least one via opening; and depositing at least one metal material into the trench openings and via openings. An intermediate semiconductor device is also disclosed.

主权项

1. A method comprising:
obtaining a wafer with at least one contact opening, and wherein the at least one contact opening includes two sidewalls and a bottom surface; depositing a metal within the at least one contact opening, and wherein the metal extends between the two sidewalls and from the bottom surface to a point below a top surface of the wafer filling a portion of the at least one contact opening; depositing a separate layer of a metal alloy into at least a portion of the at least one contact opening directly over said metal, and wherein the metal alloy extends between the two sidewalls; separating the metal alloy into a first metal layer and a second metal layer, each located over said metal, wherein the first metal layer of the metal alloy is directly over the metal and the second metal layer of the metal alloy is directly over the first metal layer of the metal alloy; depositing a barrier stack over the wafer; forming at least one trench opening; forming at least one via opening; and depositing at least one metal material into the trench openings and via openings.