SILICON WAFER AND METHOD FOR MANUFACTURING SAME

摘要

A manufacturing method of this invention includes: a step of slicing a silicon single crystal containing boron as an acceptor and obtaining a non-heat-treated silicon wafer, a step of determining a boron concentration with respect to the non-heat-treated silicon wafer, and a step of determining an oxygen donor concentration with respect to the non-heat-treated silicon wafer, in which a determination as to whether or not to perform a heat treatment at a temperature of 300° C. or more on the non-heat-treated silicon wafer is made based on a boron concentration determined in the step of determining a boron concentration, and an oxygen donor concentration determined in the step of determining an oxygen donor concentration. By this means, a wafer in which unevenly distributed LPDs that are present on the wafer are reduced is obtained.

主权项

1. A method for manufacturing a silicon wafer, comprising, in a case where, with respect to a non-heat-treated silicon wafer, a boron concentration is 5×1014 atoms/cm3 or more and 7×1014 atoms/cm3 or less and an oxygen donor concentration is 4×1014 donors/cm3 or more and 8×1014 donors/cm3 or less, performing a heat treatment at a temperature of 300° C. or more on the non-heat-treated silicon wafer.