Sample Processing Method and Charged Particle Beam Device

摘要

The present invention provides, in the preparation of a TEM or STEM sample using FIB-SEM, a technique for obtaining a processing end point on the back surface side of the sample. The state of the sample back surface being processed by the FIB is detected using a Kikuchi pattern formed when electrons that have been injected by the SEM are emitted from the sample back surface. Since this Kikuchi pattern is caused by the crystal structure of the sample back surface, the crystal orientation relative to the injected electron beam, and the crystal lattice constants, detecting the pattern allows the processing end point on the back surface side to be obtained during the FIB processing.

主权项

1. A sample processing method of processing a sample including at least two phases, at least one of the at least two phases including a structure serving as an observation target, the sample processing method comprising:
a step of performing, by using an ion beam, ion milling on a phase on a back surface of the sample facing a front surface of the sample serving as an electron beam irradiation surface of the sample, the phase being different from the phase including the structure serving as the observation target; and a step of determining a processing end point on the back surface of the sample on the basis of a strength of an interference image of an electron diffraction wave generated from the back surface of the sample by, after performing ion milling on the back surface of the sample, irradiating the front surface of the sample with an electron beam and transmitting the electron beam through the sample.