发明名称 |
LIGHT-EMITTING DEVICE |
摘要 |
A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a wavelength filter between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the wavelength filter and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap. |
申请公布号 |
US2017047478(A1) |
申请公布日期 |
2017.02.16 |
申请号 |
US201615335078 |
申请日期 |
2016.10.26 |
申请人 |
EPISTAR CORPORATION |
发明人 |
LU Chih-Chiang;LIN Yi-Chieh;LIAO Wen-Luh;CHEN Shou-Lung;HUANG Chien-Fu |
分类号 |
H01L33/08;H01L33/00;H01L33/50;H01L33/62;H01L33/10;H01L33/56 |
主分类号 |
H01L33/08 |
代理机构 |
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代理人 |
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主权项 |
1. A light-emitting device, comprising:
a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a wavelength filter between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the wavelength filter and the second light-emitting semiconductor stack; wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap. |
地址 |
Hsinchu TW |