SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device includes a semiconductor substrate comprising a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
providing a semiconductor substrate comprising a group III element and a group V element; forming an oxide layer by oxidizing a top surface of the semiconductor substrate; removing the oxide layer; and forming a gate structure on the semiconductor substrate,wherein the semiconductor substrate comprises:
a first region directly contacting a bottom surface of the gate structure; and a second region disposed under the first region,wherein the concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.