STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON GLOBALLY OR LOCALLY ISOLATED SUBSTRATES

摘要

Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional channel region is disposed above the insulating structure. Source and drain regions are disposed on either side of the three-dimensional channel region and on an epitaxial seed layer. The epitaxial seed layer is composed of a semiconductor material different from the three-dimensional channel region and disposed on the insulating structure. A gate electrode stack surrounds the three-dimensional channel region with a portion disposed on the insulating structure and laterally adjacent to the epitaxial seed layer.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; an isolation pedestal disposed above the semiconductor substrate, the isolation pedestal having a unitary body with a non-planar uppermost surface; a three-dimensional channel region disposed above the isolation pedestal; source and drain regions disposed on either side of the three-dimensional channel region; and a gate electrode stack surrounding the three-dimensional channel region with a portion disposed on the non-planar uppermost surface of the isolation pedestal.