NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nonvolatile semiconductor memory device according to an embodiment comprises: a silicon substrate; and a plurality of memory cells that nonvolatilely accumulate a charge as data, disposed along at least a first direction, on the substrate. A diffusion layer is disposed continuously in a surface of the substrate of a region straddling the plurality of memory cells disposed along the first direction. The memory cell incudes an epitaxial silicon layer disposed on the diffusion layer.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a silicon substrate; a plurality of memory cells disposed along at least a first direction, on the substrate, the plurality of the memory cells nonvolatilely accumulating a charge; and a diffusion layer disposed continuously in a surface of the substrate of a region straddling the plurality of memory cells disposed along the first direction; wherein the memory cell includes an epitaxial silicon layer disposed on the diffusion layer.