SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A semiconductor device, including a semiconductor substrate, a plurality of trenches formed on a front surface of the semiconductor substrate, a plurality of gate electrodes formed in the trenches, a base region and an anode region formed between adjacent trenches respectively in first and second element regions of the semiconductor substrate, a plurality of emitter regions and contact regions selectively formed in the base region, an interlayer insulating film covering the gate electrodes, first and second contact holes penetrating the interlayer insulating film, a plurality of contact plugs embedded in the first contact holes, a first electrode contacting the contact plugs and contacting the anode region via the second contact hole, a collector region and a cathode region formed on a back surface of the semiconductor substrate respectively in the first and second element regions, and a second electrode contacting the collector region and the cathode region.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate forming a drift layer of a first conductivity type, and including a first element region for forming an insulated gate bipolar transistor and a second element region for forming a diode; a plurality of trenches formed on a front surface of the semiconductor substrate in both the first element region and the second element region; a plurality of gate electrodes, each formed in one of the plurality of trenches with a gate insulating film therebetween; a base region of a second conductivity type formed between adjacent trenches of the plurality of trenches in the first element region; an anode region of the second conductivity type formed between adjacent trenches of the plurality of trenches in the second element region; a plurality of emitter regions of the first conductivity type selectively formed in the base region; a plurality of first contact regions of the second conductivity type selectively formed in the base region and having an impurity concentration higher than that of the base region; an interlayer insulating film covering the gate electrodes; a plurality of first contact holes, each penetrating the interlayer insulating film in a depth direction thereof; a second contact hole penetrating the interlayer insulating film in the depth direction thereof; a plurality of contact plugs, each embedded in one of the first contact holes to contact both at least one of the emitter regions and one of the first contact regions; a first electrode contacting the contact plugs, and contacting the anode region via the second contact hole; a collector region of the second conductivity type formed on a back surface of the semiconductor substrate in the first element region; a cathode region of the first conductivity type formed on the back surface of the semiconductor substrate in the second element region; and a second electrode contacting the collector region and the cathode region.