CMOS Image Sensor With Peninsular Ground Contracts And Method of Manufacturing The Same

摘要

A complementary metal oxide semiconductor (CMOS) image sensor with peninsular ground contacts includes (a) a substrate having a plurality of pixel units arranged in rows of pixel units and (b) a plurality of ground contacts for grounding the pixel units, wherein the ground contacts are formed in respective peninsular regions of the substrate within respective ones of the pixel units, and wherein each of the peninsular regions is only partly enclosed by a shallow trench isolation and the peninsular regions have alternating orientation along each of the rows of pixel units.

主权项

1. A complementary metal oxide semiconductor (CMOS) image sensor with peninsular ground contacts, comprising:
a substrate having a plurality of pixel units arranged in rows of pixel units; a plurality of ground contacts for grounding the pixel units, the ground contacts being formed in respective peninsular regions of the substrate within respective ones of the pixel units, each of the peninsular regions being only partly enclosed by a shallow trench isolation and being located at top of a trench associated with the shallow trench isolation, the peninsular regions having alternating orientation along each of the rows of pixel units.