SHADOW TRIM LINE EDGE ROUGHNESS REDUCTION

摘要

A method for etching an etch layer in a stack over a substrate wherein the etch layer is under a mask layer which is under a patterned organic mask is provided. The stack and substrate is placed on a support in the plasma chamber. A silicon based layer is deposited in situ over the stack. The silicon based layer is etched to form silicon based sidewalls or spacers on sides of the patterned organic mask. The mask layer is selectively etched with respect to the silicon based sidewalls or spacers, wherein the selectively etching the mask layer undercuts the silicon based sidewalls or spacers. The etch layer is selectively etched with respect to the mask layer. The stack and substrate are removed from the support and the plasma chamber.

主权项

1. A method for etching an etch layer in a stack over a substrate wherein the etch layer is under a mask layer which is under a patterned organic mask, comprising:
placing the stack and substrate on a support in the plasma chamber; in situ depositing a silicon based layer over the stack; etching the silicon based layer to form silicon based sidewalls or spacers on sides of the patterned organic mask; selectively etching the mask layer with respect to the silicon based sidewalls or spacers, wherein the selectively etching the mask layer undercuts the silicon based sidewalls or spacers; selectively etching the etch layer with respect to the mask layer; and removing the stack and substrate from the support and the plasma chamber.