METHOD, SYSTEM AND DEVICE FOR NON-VOLATILE MEMORY DEVICE OPERATION

摘要

Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.

主权项

1. A non-volatile memory cell comprising:
a correlated electron switch (CES) element comprising a correlated electron material (CEM), the CES element being configurable to be in an impedance state based, at least in part, on a screening length of the CEM and responsive to localization properties of electrons in the CEM; and a conducting element to connect a first terminal of the CES element to a bitline responsive to a voltage signal on a wordline, wherein the CES element is responsive to application of a first voltage across the first terminal and a second terminal of the CES element while maintaining a first current through the CES element to place a memory state of the CES element in a first impedance state; wherein the CES element is responsive to application of a second voltage between the first terminal and the second terminal while maintaining a second current through the CES element to place the memory state of the CES element in a second impedance state; and wherein the memory state of the CES element is detectable based, at least in part, on a measured current through the CES element in response to application of a third voltage between the first and second terminals in a read operation.