| 摘要 |
Provided is a semiconductor manufacturing device with which a high in-plane temperature uniformity is obtained. A heater unit has: a substrate having a cooling channel; a heater part disposed above the substrate, the heater part having a heat-generating body; and a heat insulation layer disposed between the substrate and the heater part. In this arrangement, the heat conductivity of the heat insulation layer may be lower than the heat conductivity of the substrate. The heat insulation layer may be porous SUS. The heater unit also has an insulator that covers the heat-generating body, and the heat conductivity of the heat insulation layer may be lower than the heat conductivity of the insulator. |
