| 发明名称 |
CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING N,N,N′,N′-TETRAKIS-(2-HYDROXYPROPYL)-ETHYLENEDIAMINE OR METHANESULFONIC ACID |
| 摘要 |
Described is a chemical-mechanical polishing (CMP) composition comprising the following components:;(A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6;(B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid;(C) water;(D) optionally one or more further constituents,;wherein the pH of the composition is in the range of from 2 to 6. |
| 申请公布号 |
US2017044402(A1) |
申请公布日期 |
2017.02.16 |
| 申请号 |
US201615336245 |
申请日期 |
2016.10.27 |
| 申请人 |
BASF SE |
发明人 |
Lan Yongqing;Przybylski Peter;Bao Zhenyu;Proelss Julian |
| 分类号 |
C09G1/02;H01L21/306;C09K3/14 |
主分类号 |
C09G1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for polishing a substrate or layer containing one or more III-V materials comprising contacting it with a chemical-mechanical polishing (CMP) composition comprising the following components:
(A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6, (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6. |
| 地址 |
Ludwigshafen DE |
