发明名称 成膜方法及び成膜装置
摘要 STEP 1 (Pressure increasing step) increases pressure within a raw material container to first pressure by supplying carrier gas to the inside of the raw material container by PCV. STEP 2 (Pressure decreasing step) decreases the pressure within the raw material container to second pressure by operating an exhaust device and discarding the raw material gas from a raw material gas supply pipe via an exhaust bypass pipe. STEP 3 (Stabilization step) stabilizes the vaporization efficiency for vaporizing the raw material inside the raw material container by operating the exhaust device and discarding the raw material gas while introducing the carrier gas into the raw material container. STEP 4 (Film forming step) supplies the raw material gas to the inside of the processing container via the raw material gas supply pipe and deposits a thin film on a wafer by CVD.
申请公布号 JP6081720(B2) 申请公布日期 2017.02.15
申请号 JP20120150263 申请日期 2012.07.04
申请人 東京エレクトロン株式会社 发明人 大倉 成幸;山中 孟
分类号 C23C16/448;H01L21/31;H01L21/316 主分类号 C23C16/448
代理机构 代理人
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