发明名称 フォトレジスト組成物及びレジストパターン形成方法
摘要 PROBLEM TO BE SOLVED: To provide a photoresist composition excellent in terms of line width roughness (LWR) performance, resolution, cross-sectional rectangularity, focal depth, and storage stability.SOLUTION: The provided photoresist composition includes [A] a polymer possessing a structural unit (I) including an acid-dissociable group, [B] a radiation-sensitive acid generator, and [C] a compound expressed by the following formula (1). In the following formula (1), Ris a hydrogen atom or monovalent organic group having 1-20 carbon atoms. X is a single bond, *-COO-, *-OCO-, *-CONR-, *-NRCO-, or *-Ar-CO-. Ris a monovalent linear hydrocarbon group having 1-10 carbon atoms or monovalent alicyclic hydrocarbon group having 4-20 carbon atoms. Ar is an arenediyl group having 6-20 carbon atoms. Ris a monovalent acid-dissociable group. * denotes a site bonded with R. m is an integer of 0 to 2.
申请公布号 JP6079128(B2) 申请公布日期 2017.02.15
申请号 JP20120233826 申请日期 2012.10.23
申请人 JSR株式会社 发明人 生井 準人
分类号 G03F7/004;C07C303/28;C07C309/07;C07C309/12;C07C309/19;C07D207/416;C07D307/93;C07D307/94;C09K3/00;G03F7/039 主分类号 G03F7/004
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