发明名称 IMAGE SENSOR WITH DOPED TRANSFER GATE
摘要 An image sensor includes an array of pixels, with at least one pixel including a photodetector formed in a substrate layer and a transfer gate disposed adjacent to the photodetector. The substrate layer further includes multiple charge-to-voltage conversion regions. A single photodetector can transfer collected charge to a single charge-to-voltage conversion region, or alternatively multiple photodetectors can transfer collected charge to a common charge-to-voltage conversion region shared by the photodetectors. An implant region formed when dopants are implanted into the substrate layer to form source/drain implant regions is disposed in only a portion of each transfer gate while each charge-to-voltage conversion region is substantially devoid of the implant region.
申请公布号 EP2519973(B1) 申请公布日期 2017.02.15
申请号 EP20100801541 申请日期 2010.12.27
申请人 OmniVision Technologies, Inc. 发明人 DOAN, Hung, Quoc;STEVENS, Eric, Gordon
分类号 H01L27/146 主分类号 H01L27/146
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