| 摘要 |
This method for treating a surface of a SiC substrate includes a first removal step in which a modified layer produced by subjecting the substrate (70) to mechanical polishing or chemical-mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. A second removal step in which macro-step bunching occurred in an epitaxial layer (71) is removed by heating the substrate (70) under Si vapor pressure may also be performed. Since the etching rate can be varied, etching rate in the first removal step is high, so that the modified layer can be removed in a short time. Meanwhile, etching rate in the second removal step is comparatively low, so that excessive removal of the epitaxial layer (71) can be prevented. |
