| 摘要 |
A solid-state imaging device includes: an epilayer; pixel electrodes; a photoelectric converting film formed above the pixel electrodes and converting incident light into electric signals; a transparent electrode formed on the photoelectric converting film; charge accumulating regions of an n-type each (i) formed in the epilayer to correspond to one of the pixel electrodes, (ii) electrically connected to the one corresponding pixel electrode, and (iii) accumulating signal charges generated by the photoelectric converting film through the photo-electrically conversion; charge barrier regions of a p-type each formed in the epilayer to contact a bottom of a corresponding one of the charge accumulating regions; and charge draining regions of an n-type each formed in the epilayer to contact a bottom of a corresponding one of the charge barrier regions. |
