发明名称 |
SILICON-CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON-CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
On a silicon carbide semiconductor substrate, heat treatment is performed after one layer or two or more layers of an oxide film, a nitride film, or an oxynitride film are formed as a gate insulating film. The heat treatment after the gate insulating film is formed is performed for a given period in an atmosphere that includes H 2 and H 2 O without including O 2 . As a result, hydrogen or hydroxyl groups can be segregated in a limited region that includes the interface of the silicon carbide substrate and the gate insulating film. The width of the region to which the hydrogen or hydroxyl groups is segregated is from 0.5 nm to 10 nm. In such a manner, the interface state density can be lowered and high channel mobility can be realized. |
申请公布号 |
EP3021353(A4) |
申请公布日期 |
2017.02.15 |
申请号 |
EP20140822620 |
申请日期 |
2014.07.09 |
申请人 |
Fuji Electric Co., Ltd. |
发明人 |
MAKIFUCHI, Youichi;TSUTSUMI, Takashi;ARAOKA, Tsuyoshi;OKAMOTO, Mitsuo;FUKUDA, Kenji |
分类号 |
H01L21/336;H01L21/316;H01L21/322;H01L21/324;H01L29/12;H01L29/16;H01L29/51;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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