| 摘要 |
A thin film transistor switch (20) and a manufacturing method therefor. The switch comprises a gate electrode G, a drain electrode D, a source electrode S, a semiconductor layer (23) and a fourth electrode B. The drain electrode D is connected to a first signal. The gate electrode G is connected to a control signal to control the ON or OFF state of the switch. The source electrode S outputs a first signal when the switch is in an ON state. The fourth electrode B and the gate electrode G are respectively provided at either side of the semiconductor layer (23), and the fourth electrode B is made of a conductive material, which can connect to a different potential as required. In the above-mentioned manner, a leakage current can be reduced in a channel while a switch is in an ON state so as to improve the properties of the switch. |
