发明名称 Light emitting diode device and method for manufacturing the same
摘要 Disclosed are a semiconductor device, a light emitting device and a method for manufacturing the same. The semiconductor device includes a substrate, a plurality of rods disposed on the substrate, a plurality of particles disposed between the rods and on the substrate, and a first semiconductor layer disposed on the rods. The method for manufacturing the semiconductor device includes preparing a substrate, disposing a plurality of first particles on the substrate, and forming a plurality of rods by etching a portion of the substrate by using the first particles as an etch mask. The semiconductor device effectively reflects in an upward direction light by the above particles, so that light efficiency is improved. The rods are easily formed by using the first particles.
申请公布号 EP2389693(B1) 申请公布日期 2017.02.15
申请号 EP20090838929 申请日期 2009.12.09
申请人 LG Siltron Inc. 发明人 LEE, Ho-Jun;LEE, Dong-Kun;KIM, Yong-Jin;KIM, Doo-Soo
分类号 H01L33/20;H01L33/00;H01L33/02;H01L33/10;H01L33/22 主分类号 H01L33/20
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