发明名称 基板処理装置、半導体装置の製造方法、及び熱電対支持体
摘要 A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube.
申请公布号 JP6080451(B2) 申请公布日期 2017.02.15
申请号 JP20120210264 申请日期 2012.09.25
申请人 株式会社日立国際電気 发明人 山口 英人;小杉 哲也;上野 正昭
分类号 H01L21/31;C23C16/52;H01L21/205;H01L21/22;H01L21/324 主分类号 H01L21/31
代理机构 代理人
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