LED that has bounding silicon-doped regions on either side of a strain release layer

摘要

A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second relatively-highly silicon-doped region. The second relatively-highly silicon-doped region is a sublayer of the active layer of the LED. The first relatively-highly silicon-doped region is a sublayer of the N-type layer of the LED. The first relatively-highly silicon-doped region is also separated from the remainder of the N-type layer by an intervening sublayer that is only lightly doped with silicon. The silicon doping profile promotes current spreading and high output power (lumens/watt). The LED has a low reverse leakage current and a high ESD breakdown voltage. The strain release layer has a concentration of indium that is between 5×1019 atoms/cm3 and 5×1020 atoms/cm3, and the first and second relatively-highly silicon-doped regions have silicon concentrations that exceed 1×1018 atoms/cm3.

主权项

1. A light emitting device comprising:
an n-side layer including a first n-type sublayer having a first silicon concentration; a strain release layer formed on the first n-type sublayer of the n-side layer and having a second silicon concentration; an active layer formed on the strain release layer and including a plurality of quantum well layers and a plurality of quantum barrier layers; an interface region between the strain release layer and the active layer, the interface region having a third silicon concentration; and a p-type layer formed on the active layer, wherein the first silicon concentration of the first n-type sublayer of the n-side layer is higher than the second silicon concentration of the strain release layer, the third silicon concentration of the interface region is higher than the second silicon concentration of the strain release layer, and the third silicon concentration of the interface region is higher than a silicon concentration of the plurality of quantum well layers and the plurality of quantum barrier layers.