Multiple layer interface formation for semiconductor structure

摘要

There is set forth herein a method of fabricating a contact interface formation. A layer of Ti metal can be deposited on a substrate and a layer of Ni metal can be deposited over the layer of Ti metal. An annealing process can be performed to form a contact interface formation having Ti in reacted form and Ni in reacted form.

主权项

1. A method of fabrication of a contact interface formation, the method comprising:
depositing a layer of Ti in metal form over a source or drain region formed on a substrate; depositing a layer of Ni in metal form over the layer of Ti in metal form; and performing an annealing process of the deposited layer of Ti in metal form and the deposited layer of Ni in metal form to form the contact interface formation including Ni-silicide and Ti-silicide, the contact interface formation providing for an interface between the source or drain region and a contact, the annealing process comprising:
performing a first annealing to form a layer of Ni-silicide from the deposited layer of Ni in metal form;performing a second annealing to lower a resistance of the layer of Ni-silicide and further to form a layer of Ti-silicide from the deposited layer of Ti in metal form; andperforming a third annealing to lower a resistance the layer of Ti-silicide.