| 发明名称 | Magnetic tunnel junction (MTJ) device array | ||
| 摘要 | A semiconductor device includes a first magnetic tunnel junction (MTJ) device, a second MTJ device, and a top electrode. The first MTJ device includes a barrier layer. The second MTJ device includes the barrier layer. The top electrode is coupled to the first MTJ device and the second MTJ device. | ||
| 申请公布号 | US9570509(B2) | 申请公布日期 | 2017.02.14 |
| 申请号 | US201514609169 | 申请日期 | 2015.01.29 |
| 申请人 | QUALCOMM Incorporated | 发明人 | Machkaoutsan Vladimir;Gottwald Matthias Georg;Badaroglu Mustafa;Kan Jimmy;Lee Kangho;Lu Yu;Park Chando |
| 分类号 | H01L27/22;H01L43/08;H01L43/12;H01L43/02 | 主分类号 | H01L27/22 |
| 代理机构 | Toler Law Group, PC | 代理人 | Toler Law Group, PC |
| 主权项 | 1. A semiconductor device comprising: a first magnetic tunnel junction (MTJ) device comprising a barrier layer and a magnetic layer, wherein the magnetic layer comprises a pinned magnetic layer; and a second MTJ device comprising the barrier layer and the magnetic layer; a top electrode coupled to the first MTJ device and the second MTJ device; and a via that couples the pinned magnetic layer to the top electrode. | ||
| 地址 | San Diego CA US | ||