发明名称 Semiconductor memory device and operating method thereof
摘要 The invention relates to a semiconductor memory device and an operating method thereof. The semiconductor memory device includes a first plane and a second plane each including a plurality of memory blocks, a first read and write circuit and a second read and write circuit suitable for sensing and temporarily storing data programmed into the first and second planes, respectively, and a control logic suitable for controlling the first and second read and write circuits to perform a read operation on the first and second planes, respectively, wherein the control logic controls the first and second read and write circuits to set the temporarily stored data as setting data, performs a new read operation to store new data, or maintains the temporarily stored data, depending on whether the first and second planes are in an LSB program state or an MSB program state.
申请公布号 US9570178(B2) 申请公布日期 2017.02.14
申请号 US201514723168 申请日期 2015.05.27
申请人 SK Hynix Inc. 发明人 Joo Byoung In;Kim Byoung Young
分类号 G11C16/04;G11C16/10;G11C16/26;G11C5/02;G11C11/56;G11C16/32 主分类号 G11C16/04
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. A semiconductor memory device comprising: a first plane and a second plane, each including a plurality of memory blocks; a first read and write circuit and a second read and write circuit suitable for sensing and temporarily storing data programmed into the first and second planes, respectively; and a control logic suitable for controlling the first and second read and write circuits to perform a read operation on the first and second planes, respectively, wherein the control logic controls the first and second read and write circuits to set the temporarily stored data as setting data, performs a new read operation to store new data, or maintains the temporarily stored data, depending on whether the first and second planes are in an LSB program state or an MSB program state.
地址 Gyeonggi-do KR