Controlled crystallization to grow large grain organometal halide perovskite thin film

摘要

A method of forming perovskite thin films with micron-sized perovskite grains is provided. A layer of PbX2 in a solution containing a metal ion additive is applied to a structure. The structure with the PbX2 layer is annealed a first time. The PbX2 is exposed to CH3NH3X in a solvent. The structure with the exposed PbX2 layer is annealed a second time resulting in a CH3NH3PbX3 layer. X is selected from a group consisting of Cl, Br, I, CN, and SCN.

主权项

1. A method of forming perovskite thin films with micron-sized perovskite grains, the method comprising:
applying a layer of PbX2 in a solution containing a metal ion additive to a structure; annealing the structure with the PbX2 layer a first time; exposing the PbX2 to CH3NH3X in a solvent; and annealing the structure with the exposed PbX2 layer a second time resulting in a CH3NH3PbX3 layer, wherein X is selected from a group consisting of Cl, Br, I, CN, and SCN.