Semiconductor device including a vertical edge termination structure and method of manufacturing

摘要

A semiconductor device includes a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface connecting the first and second surfaces. An edge termination structure includes a glass structure and extends along the edge surface, at least from a plane coplanar with the first surface towards the second surface. A conductive structure extends parallel to the first surface and overlaps the glass structure at the first side.

主权项

1. A semiconductor device, comprising:
a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface connecting the first and second surfaces, wherein
the semiconductor body comprises a drift zone from a first conductivity type the drift zone extending from an anode region to one of a pedestal region or a field stop layer, the drift zone forming a pn junction with the anode region and a unipolar homojunction with the field stop layer or the pedestal layer;an edge termination structure including a glass structure and extending along the edge surface at least from a plane coplanar with the first surface towards the second surface, wherein the glass structure results from a glass molding process and does not contain hydrocarbon compounds; anda conductive structure extending parallel to the first surface and overlapping the glass structure at the first side.