发明名称 System and method to emulate an electrically erasable programmable read-only memory
摘要 The disclosure relates to an electronic memory system, and more specifically, to a system to emulate an electrically erasable programmable read-only memory, and a method to emulate an electrically erasable programmable read-only memory. According to an embodiment of the disclosure, a system to emulate an electrically erasable programmable read-only memory is provided, the system including a first memory section and a second memory section, wherein the first memory section comprises a plurality of storage locations configured to store data partitioned into a plurality of data segments and wherein the second memory section is configured to store information mapping a physical address of a data segment stored in the first memory section to a logical address of the data segment.
申请公布号 US9569354(B2) 申请公布日期 2017.02.14
申请号 US201313957604 申请日期 2013.08.02
申请人 Infineon Technologies AG 发明人 Backhausen Ulrich;Kern Thomas;Nirschl Thomas;Rosenbusch Jens;Bi Xiangting;Paparisto Edvin
分类号 G06F12/02;G06F11/10;G11C29/18 主分类号 G06F12/02
代理机构 Eschweiler & Associates, LLC 代理人 Eschweiler & Associates, LLC
主权项 1. A system, comprising: a first memory section; and a second memory section, the system configured to emulate an electrically erasable programmable read-only memory if data is to be stored with high endurance, wherein the first memory section comprises a plurality of storage locations configured to store the data partitioned into a plurality of data segments and wherein the second memory section is configured to store information mapping a physical address of a data segment of the plurality of data segments stored in the first memory section to a logical address of the data segment, wherein the system is configured to erase all data segments stored in a particular row or a particular column of the first memory section and marked for erasing as soon as the number of data segments marked for erasing in the particular row or the particular column of the first memory section reaches a predetermined threshold.
地址 Neubiberg DE