Thinner composition for improving coating and removing performance of resist

摘要

Provided are a thinner composition for improving coating property of a resist and for removing the same, which includes 10 to 80 wt. % of alkyl (with 1 to 5 carbon atoms) 2-hydroxyisobutyrate, 20 to 90 wt. % of propyleneglycol alkyl (with 1 to 5 carbon atoms)ether acetate, and 10 to 1000 ppm of a surfactant represented by Formula 1 to a total weight of the alkyl 2-hydroxyisobutyrate and propyleneglycol alkylether acetate, so as to achieve excellent solubility to various photoresists and bottom anti-reflective coatings (BARC) and high edge bead removing (EBR) performance, possibly be employed in a process for recycling photoresist-coated wafers, and remarkably improve coating property of the photoresist, and a method for manufacturing a semiconductor device or a thin film transistor liquid crystal display device including removal of the photoresist by using the above-described thinner composition.

主权项

1. A thinner composition for improving coating property of a resist and for removing the same, comprising:
10 to 80 percent by weight of alkyl 2-hydroxyisobutyrate, wherein the alkyl has 1 to 5 carbon atoms; 20 to 90 percent by weight of propyleneglycol alkyl ether acetate, wherein the alkyl has 1 to 5 carbon atoms; and a surfactant represented by Formula 1 below in an amount of 10 to 1,000 ppm to a total weight of the alkyl 2-hydroxyisobutyrate and the propyleneglycol alkylether acetate: wherein R1 and R2 are each independently hydrogen, alkyl group having 1 to 10 carbon atoms or aryl group having 6 to 14 carbon atoms, and n is an integer of 1 to 5.