发明名称 Micromechanical sensor device with a getter in an enclosed cavity
摘要 A micromechanical sensor device and a corresponding manufacturing method are described. The micromechanical sensor device includes a CMOS wafer having a front side and a rear side, a rewiring device formed on the front side of the CMOS wafer including a plurality of stacked printed conductor levels and insulation layers, an MEMS wafer having a front side and a rear side, a micromechanical sensor device formed across the front side of the MEMS wafer, a bond connection between the MEMS wafer and the CMOS wafer, a cavern between the MEMS wafer and the CMOS wafer, in which the sensor device is hermetically enclosed, and an exposed getter layer area applied to at least one of the plurality of stacked printed conductor levels and insulation layers.
申请公布号 US9567205(B2) 申请公布日期 2017.02.14
申请号 US201414534903 申请日期 2014.11.06
申请人 ROBERT BOSCH GMBH 发明人 Reinmuth Jochen;Gonska Julian
分类号 B81B7/00;B81C1/00;B81B3/00 主分类号 B81B7/00
代理机构 Norton Rose Fulbright US LLP 代理人 Norton Rose Fulbright US LLP ;Messina Gerard
主权项 1. A micromechanical sensor device, comprising: a CMOS wafer having a front side and a rear side; a rewiring device formed on the front side of the CMOS wafer and including a plurality of stacked printed conductor levels and insulation layers; an MEMS wafer having a front side and a rear side; a micromechanical sensor device formed across the front side of the MEMS wafer in a layer that is different than of the MEMS wafer; a bond connection between the MEMS wafer and the CMOS wafer; a cavern between the MEMS wafer and the CMOS wafer, in which the sensor device is hermetically enclosed; and an exposed getter layer area applied to at least one of the plurality of stacked printed conductor levels and insulation layers; wherein the getter layer area has a front side that faces the MEMS wafer, an uppermost layer of the rewiring device has a front side that faces the MEMS wafer, such that a distance from the front side of the CMOS wafer to the front side of the uppermost layer of the rewiring device, wherein the sensor device is directly above the getter layer so that an axis that is perpendicular to the getter layer intersects the sensor device, wherein the getter layer is disposed in a recess formed in the rewiring device, wherein the sensor device flexes toward the getter layer and the rewiring device, and wherein the uppermost layer of the rewiring device serves as a stop that prevents the sensor device from contacting the getter layer.
地址 Stuttgart DE