发明名称 CR snubber circuit
摘要 A CR snubber circuit capable of increasing a reduction effect of the effective inductance component and suppressing a ringing component generated at the time of switching the switching element is obtained. A first current path formed on one surface of the substrate and a second current path formed on the other surface, which is the opposite side of the one surface of the substrate, are opposed to each other with the substrate being sandwiched therebetween, and the capacitor 5 and the resistor 6 are arranged such that current flows in opposite directions in the first current path and the second current path, and a band elimination filter is formed by the capacitor 5, the resistor 6, and an effective inductance component obtained by coupling an inductance component included in the first current path and an inductance component included in the second current path.
申请公布号 US9570972(B2) 申请公布日期 2017.02.14
申请号 US201314364363 申请日期 2013.10.02
申请人 Mitsubishi Electric Corporation 发明人 Kanda Mitsuhiko;Tamura Shizuri;Hatai Akira;Sekimoto Yasuhiro;Nojiri Yuji;Hayashi Yoshitomo
分类号 H02H9/04;H02M1/34;H02M1/32;H02H7/122 主分类号 H02H9/04
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC ;Turner Richard C
主权项 1. A CR snubber circuit that is formed on a substrate and that includes a capacitor and a resistor that are connected in series between DC terminals that apply DC voltage to a power semiconductor module that is formed with inclusion of a switching element, wherein a first current path formed on one surface of the substrate and a second current path formed on another surface, which is an opposite side of the one surface of the substrate, are opposed to each other with the substrate being sandwiched therebetween, the capacitor and the resistor are arranged such that current flows in opposite directions in the first current path and the second current path, and a band elimination filter is formed by the capacitor, the resistor, and an effective inductance component obtained by coupling an inductance component included in the first current path and an inductance component included in the second current path.
地址 Tokyo JP