发明名称 Light-emitting element
摘要 In the present invention, a light-emitting element operating at low driving voltage, consuming low power, emitting light with good color purity and manufactured in high yields can be obtained. A light-emitting element is disclosed with a configuration composed of a first layer containing a light-emitting material, a second layer, a third layer are formed sequentially over an anode to be interposed between the anode and a cathode in such a way that the third layer is formed to be in contact with the cathode. The second layer is made from n-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron donor property. The third layer is made from p-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron acceptor property.
申请公布号 US9570697(B2) 申请公布日期 2017.02.14
申请号 US201113044792 申请日期 2011.03.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 Kumaki Daisuke;Seo Satoshi
分类号 H01L29/08;H01L35/24;H01L51/00;H01L51/50;H01L51/52 主分类号 H01L29/08
代理机构 Robinson Intellectual Property Law Office 代理人 Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项 1. A light-emitting device comprising: an anode; a first layer containing a light-emitting material over the anode; a second layer containing a first metal oxide over the first layer; a third layer containing a second metal oxide over and in direct contact with the second layer; and a cathode over and in direct contact with the third layer, wherein the second layer is different from the first layer, wherein the second metal oxide is molybdenum oxide, and wherein the cathode comprises a material which is different from that of the second metal oxide.
地址 Kanagawa-ken JP