Method for fabricating electronic devices having semiconductor memory unit

摘要

Devices and method based on disclosed technology include, among others, a method for capable of providing asymmetrical arrangement of hole patterns while improving non-uniformity of an electronic device. Specifically, a method for fabricating hole patterns in one implementation includes forming a mask pattern which is defined with hole patterns of an asymmetrical arrangement with different longitudinal and transverse intervals, over a layer to be etched; and etching the layer to be etched, using the mask pattern as an etch barrier.

主权项

1. A method for fabricating an electronic device having a semiconductor memory unit, comprising:
forming a mask pattern which is defined with hole patterns of an asymmetrical arrangement with different longitudinal and transverse intervals, over an etch target layer; and etching the etch target layer, using the mask pattern as an etch barrier, wherein the forming of the mask pattern comprises: forming a photoresist pattern with a plurality of openings which are defined by first regions where optical processing is performed and second regions where optical processing is not performed over a sacrificial layer; forming a gap filling layer to fill or cover the openings defined by the second regions of the photoresist pattern; and etching the sacrificial layer using the first regions of the photoresist pattern and the gap filling layer as etch barriers, and forming a sacrificial pattern which is defined with the hole patterns of the asymmetrical arrangement with the different longitudinal and transverse intervals.