| 主权项 |
1. A light emitting diode, comprising:
at least two light emitting units located on a plane, each light emitting unit comprising: a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode; the first semiconductor layer, the active layer, and the second semiconductor layer are stacked with each other in order; the first electrode is electrically connected with the first semiconductor layer; and the second electrode is electrically connected with the second semiconductor layer, wherein the at least two light emitting units share the same first semiconductor layer and share the same first electrode located on the first semiconductor layer; wherein all of the active layers are spaced from each other and located on and abutting a planar surface of the first semiconductor layer, a distance between adjacent active layers ranges from about 1 micron to about 1 millimeter, and each of the at least two light emitting units is configured to extract visible light emitted from sidewalls of adjacent light emitting units; the first semiconductor layer has a second surface opposite to the planar surface, the planar surface comprises a plurality of first regions spaced apart from each other, and each active layer is located on one of the plurality of first regions; and in each light emitting unit, the first electrode covers an entirety of the second surface of the first semiconductor layer, and a reflector layer covers an entire surface of the first electrode away from the first semiconductor layer. |
