发明名称 |
Field effect transistor devices with buried well protection regions |
摘要 |
A method of forming a transistor device includes providing a drift layer having a first conductivity type, forming a first region in the drift layer, the first region having a second conductivity type that is opposite the first conductivity type, forming a body layer on the drift layer including the first region, forming a source layer on the body layer, forming a trench in the source layer and the body layer above the first region and extending into the first region, forming a gate insulator on the inner sidewall of the trench, and forming a gate contact on the gate insulator. |
申请公布号 |
US9570585(B2) |
申请公布日期 |
2017.02.14 |
申请号 |
US201514857306 |
申请日期 |
2015.09.17 |
申请人 |
Cree, Inc. |
发明人 |
Cheng Lin;Agarwal Anant;Pala Vipindas;Palmour John |
分类号 |
H01L21/336;H01L29/66;H01L29/78;H01L29/739;H01L29/06;H01L29/16;H01L29/10 |
主分类号 |
H01L21/336 |
代理机构 |
Myers Bigel, P.A. |
代理人 |
Myers Bigel, P.A. |
主权项 |
1. A method of forming a transistor device, comprising:
providing a drift layer having a first conductivity type; forming a body layer on the drift layer, the body layer having a second conductivity type that is opposite the first conductivity type; forming a source layer on the body layer, the source layer having the first conductivity type; forming a trench in the source layer and the body layer, the trench extending into the drift layer and having an inner sidewall and a floor; sequentially forming a channel layer and a second layer on the inner sidewall and floor of the trench, the channel layer having the first conductivity type and the second layer having the second conductivity type; thermally oxidizing portions of the second layer on the inner sidewall of the trench; removing the oxidized portions of the second layer to leave an un-oxidized portion of the second layer on the floor of the trench; forming a gate insulator on the inner sidewall of the trench over the channel layer and on the floor of the trench over the un-oxidized portion of the second layer; and forming a gate contact on the gate insulator. |
地址 |
Durham NC US |