Bipolar transistor

摘要

A semiconductor device comprising a bipolar transistor and a method of making the same. A power amplifier including a bipolar transistor. The bipolar transistor includes a collector including a laterally extending drift region. The also includes a base located above the collector. The bipolar transistor further includes an emitter located above the base. The bipolar transistor also includes a doped region having a conductivity type that is different to that of the collector. The doped region extends laterally beneath the collector to form a junction at a region of contact between the doped region and the collector. The doped region has a non-uniform lateral doping profile. A doping level of the doped region is highest in a part of the doped region closest to a collector-base junction of the bipolar transistor.

主权项

1. A semiconductor device comprising a bipolar transistor, the bipolar transistor comprising:
a collector including a laterally extending drift region; a base located above the collector; an emitter located above the base; and a doped region having a conductivity type that is different to that of the collector, the doped region extending laterally beneath the collector to form a junction at a region of contact between the doped region and the collector, wherein the doped region has a non-uniform lateral doping profile, and wherein a doping level of the doped region is highest in a part of the doped region closest to a collector-base junction of the bipolar transistor.