Methods of doping substrates with ALD

摘要

Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.

主权项

1. A method of doping a FinFET transistor, the method comprising:
depositing a layer of dopants onto a substrate; depositing a dielectric layer onto the layer of dopants; implanting silicon or argon into the dielectric layer prior to annealing the dielectric layer; and annealing the dielectric to diffuse the dopants into the substrate.