Semiconductor structure and manufacturing method thereof

摘要

A semiconductor structure includes a first device and a second device. The first device includes a first substrate, a plurality of vias passing through the first substrate and filled with a conductive or semiconductive material and a first oxide layer surrounding the conductive or semiconductive material, a cavity surrounded by the first substrate, a metallic material disposed over the first surface, a second oxide layer disposed over the second surface, a membrane disposed over the second oxide layer and the cavity, a heater disposed within the membrane, a sensing electrode disposed over the membrane and the heater, and a sensing material disposed over the cavity and contacting with the sensing electrode. The second device includes a second substrate, and a bonding structure disposed over the second substrate. The metallic material is bonded with the bonding structure to integrate the first device with the second device.

主权项

1. A semiconductor structure, comprising:
a first device comprising:
a first substrate including a first surface, a second surface opposite to the first surface, and a plurality of vias passing through the first substrate and filled with a conductive or semiconductive material and a first oxide layer surrounding the conductive or semiconductive material;a cavity surrounded by the first substrate;a metallic material disposed over the first surface, covering some of the plurality of vias, and electrically connecting with the first substrate;a second oxide layer disposed over the second surface;a membrane disposed over the second oxide layer and the cavity;a heater disposed within the membrane and electrically connected with the first substrate through the oxide layer;a sensing electrode disposed over the membrane and the heater; anda sensing material disposed over the cavity and contacting with the sensing electrode,and
a second device comprising:
a second substrate; anda bonding structure disposed over the second substrate,wherein the metallic material is bonded with the bonding structure to integrate the first device with the second device.