Method to fabricate FinFET sensors, in particular, FinFET sensors for ionic, chemical and biological applications on Si-Bulk

摘要

The present invention relates to a method of producing a FinFET sensor device comprising the steps of:
providing a silicon substrate;etching the silicon substrate to produce at least one upwardly extending Fin structure externally protruding from a surface of the silicon substrate;depositing a spacer layer on the at least one Fin structure;anisotropically etching a section of the spacer layer to expose the underlying silicon;isotropic etching of the exposed silicon surrounding the at least one Fin structure; andcarrying out oxidation of the silicon surrounding the at least one Fin structure to produce a Fin structure of silicon inside the at least one Fin structure.;The present invention also relates to FinFET sensor devices produced by the above method.

主权项

1. A method of producing a FinFET sensor device comprising the steps of:
providing a silicon substrate; etching the silicon substrate to produce at least one upwardly extending Fin structure externally protruding from a surface of the silicon substrate; depositing a spacer layer on the at least one Fin structure; etching a section of the spacer layer to expose the underlying silicon; isotropic etching of the exposed silicon surrounding the at least one Fin structure; and carrying out oxidation of the silicon surrounding the at least one upwardly extending Fin structure to produce a Fin structure of silicon that is detached and isolated from the silicon substrate and inside the at least one upwardly extending Fin structure.