Method for forming a semiconductor image sensor device

摘要

In one embodiment, a method for forming a backside illuminated image sensor includes providing a region of semiconductor material having a first major surface and a second major surface configured to receive incident light. A pixel structure is formed within the region of semiconductor material adjacent the first major surface. Thereafter, a trench structure comprising a metal material is formed extending through the region of semiconductor material. A first surface of the trench structure is adjacent the first major surface of the region of semiconductor material and a second surface adjoining the second major surface of the region of semiconductor material. A first contact structure is electrically connected to one surface of the conductive trench structure and a second contact structure is electrically connected to an opposing second surface.

主权项

1. A method for forming an image sensor device comprising:
providing a semiconductor substrate comprising a first major surface and an opposing second major surface, wherein the semiconductor substrate further comprises a first dielectric region disposed adjacent the first major surface and a first semiconductor region disposed adjacent the first dielectric region; forming a plurality of doped regions within the first semiconductor region; forming a plurality of conductive structures on the first semiconductor region and adjacent at least portions of the plurality of doped regions, wherein the plurality of doped regions and the plurality of conductive structures are configured as a pixel structure; thereafter forming a trench extending through the first semiconductor region to the first dielectric region; providing a conductive material within the trench, wherein the conductive material is electrically isolated from the first semiconductor region, and wherein the conductive material comprises a metal, and wherein the trench and the conductive material are configured as a conductive trench structure; forming an insulated interconnect structure overlying the first semiconductor region, wherein the insulated interconnect structure is electrically coupled to the conductive material in the trench; removing the semiconductor substrate and leaving at least a portion of the first dielectric region in place adjacent to the first semiconductor region; and forming a first electrode on the first dielectric region and electrically coupled to the conductive material in the trench.