| 发明名称 | Semiconductor device having buried power rail | ||
| 摘要 | A semiconductor device includes: a substrate; a power rail on the substrate; an active layer on the substrate and at same layer as the power rail; and a contact electrically connecting the power rail to the active layer. The active layer includes source/drain terminals. | ||
| 申请公布号 | US9570395(B1) | 申请公布日期 | 2017.02.14 |
| 申请号 | US201615158500 | 申请日期 | 2016.05.18 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Sengupta Rwik;Hong Joon Goo;Rodder Mark |
| 分类号 | H01L23/02;H01L23/528;H01L23/535;H01L29/78;H01L21/768;H01L23/532;H01L29/06 | 主分类号 | H01L23/02 |
| 代理机构 | Lewis Roca Rothgerber Christie LLP | 代理人 | Lewis Roca Rothgerber Christie LLP |
| 主权项 | 1. A semiconductor device comprising: a substrate; a power rail on the substrate; an active layer on the substrate and at same layer as the power rail, the active layer comprising source/drain terminals; and a contact electrically connecting the power rail to the active layer. | ||
| 地址 | Suwon-si KR | ||