| 发明名称 | Formation of SiGe nanotubes | ||
| 摘要 | Techniques for forming nanostructured materials are provided. In one aspect of the invention, a method for forming nanotubes on a buried insulator includes the steps of: forming one or more fins in a SOI layer of an SOI wafer, wherein the SOI wafer has a substrate separated from the SOI layer by the buried insulator; forming a SiGe layer on the fins; annealing the SiGe layer under conditions sufficient to drive-in Ge from the SiGe layer into the fins and form a SiGe shell completely surrounding each of the fins; and removing the fins selective to the SiGe shell, wherein the SiGe shell which remains forms the nanotubes on the buried insulator. A nanotube structure and method of forming a nanotube device are also provided. | ||
| 申请公布号 | US9570299(B1) | 申请公布日期 | 2017.02.14 |
| 申请号 | US201514847619 | 申请日期 | 2015.09.08 |
| 申请人 | International Business Machines Corporation | 发明人 | Cheng Kangguo;He Hong;Khakifirooz Ali;Li Juntao |
| 分类号 | H01L21/02;H01L21/306;H01L21/324;H01L29/06;H01L29/161;G01N33/00;B82Y15/00;B82Y40/00 | 主分类号 | H01L21/02 |
| 代理机构 | Michael J. Chang, LLC | 代理人 | Alexanian Vazken;Michael J. Chang, LLC |
| 主权项 | 1. A method for forming nanotubes on a buried insulator, the method comprising the steps of: forming one or more fins in a silicon-on-insulator (SOI) layer of an SOI wafer, wherein the SOI wafer has a substrate separated from the SOI layer by the buried insulator; forming a silicon germanium (SiGe) layer on the fins; annealing the SiGe layer under conditions sufficient to drive-in germanium (Ge) from the SiGe layer into the fins and form a SiGe shell completely surrounding each of the fins; and removing the fins selective to the SiGe shell, wherein the SiGe shell which remains forms the nanotubes on the buried insulator. | ||
| 地址 | Armonk NY US | ||