| 发明名称 |
High reliability non-volatile static random access memory devices, methods and systems |
| 摘要 |
A memory cell includes a storage element coupled to a first data node and a second data node, a first programmable nonvolatile element and a second programmable nonvolatile element, a first switch element and a second switch element. The first switch element is configured to couple the first programmable nonvolatile element to the first data node during a first read mode of the memory cell. The second switch element is configured to couple the second programmable nonvolatile element to the second data node during the first read mode. |
| 申请公布号 |
US9570152(B1) |
申请公布日期 |
2017.02.14 |
| 申请号 |
US201414512647 |
申请日期 |
2014.10.13 |
| 申请人 |
Cypress Semiconductor Corporation |
发明人 |
Zain Suhail;Anderson Walt;Puchner Helmut;Still David W. |
| 分类号 |
G11C16/04;G11C11/41;G11C16/26;G11C16/10;G11C14/00 |
主分类号 |
G11C16/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory cell, comprising:
a storage element coupled to a first data node and a second data node; a first programmable nonvolatile element and a second programmable nonvolatile element; and a first switch element and a second switch element, wherein the first switch element is configured to couple the first programmable nonvolatile element to the first data node during a first read mode of the memory cell and the second switch element is configured to couple the second programmable nonvolatile element to the second data node during the first read mode. |
| 地址 |
San Jose CA US |
