Semiconductor device and fabricating method thereof

摘要

Provided are a semiconductor device and a fabricating method thereof. The fabricating method includes forming first to fourth fins, each extending in a first direction, to be spaced apart in a second direction intersecting the first direction, forming first and second gate lines, each extending in the second direction, on the first to fourth fins to be spaced apart in the first direction, forming a first contact on the first gate line between the first and second fins, forming a second contact on the first gate line between the third and fourth fins, forming a third contact on the second gate line between the first and second fins, forming a fourth contact on the second gate line between the third and fourth fins and forming a fifth contact on the first to fourth contacts so as to overlap with the second contact and the third contact and so as not to overlap with the first contact and the fourth contact, wherein the fifth contact is arranged to diagonally traverse a quadrangle defined by the first to fourth contacts.

主权项

1. A semiconductor device, comprising:
first to fourth fins, each extending in a first direction, arranged to be spaced apart in a second direction intersecting the first direction; first and second gate lines, each extending in the second direction, arranged on the first to fourth fins to be spaced apart in the first direction; a first contact formed on the first gate line between the first and second fins; a second contact formed on the first gate line between the third and fourth fins; a third contact formed on the second gate line between the first and second fins; a fourth contact formed on the second gate line between the third and fourth fins; and a fifth contact formed on the first to fourth contacts so as to overlap with the second contact and the third contact and so as not to overlap with the first contact and the fourth contact, wherein the fifth contact is arranged to diagonally traverse a quadrangle defined by the first to fourth contacts.